FDS6576

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Series :

PowerTrench®

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Mount :

Surface Mount

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

-20V

Terminal Form :

Gull wing

Weight :

130mg

Resistance :

14mOhm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

ECCN Code :

EAR99

Dual Supply Voltage :

-20V

REACH SVHC :

No SVHC

Current Rating :

-11A

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Contact Plating :

Tin

Width :

4mm

Fall Time (Typ) :

79 ns

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Input Capacitance (Ciss) (Max) @ Vds :

4044pF @ 10V

Rds On (Max) @ Id, Vgs :

14m Ω @ 11A, 4.5V

Termination :

SMD/SMT

Nominal Vgs :

-830 mV

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Turn-Off Delay Time :

124 ns

Turn On Delay Time :

18 ns

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

JESD-609 Code :

e4

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

12V

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Drain to Source Voltage (Vdss) :

20V

Rise Time :

17ns

Threshold Voltage :

-830mV

Height :

1.5mm

Voltage - Rated DC :

-20V

Factory Lead Time :

18 Weeks

Continuous Drain Current (ID) :

11A

Length :

5mm