FDS6575

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Mfr.Part #
FDS6575
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 20V 10A 8SOIC
Stock
3
In Stock :
3

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
-20V
Fall Time (Typ) :
78 ns
Additional Feature :
LOGIC LEVEL COMPATIBLE
Contact Plating :
Tin
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Published :
2001
Series :
PowerTrench®
Power Dissipation-Max :
2.5W Ta
Gate to Source Voltage (Vgs) :
8V
Element Configuration :
Single
Nominal Vgs :
-600 mV
Pbfree Code :
yes
Turn-Off Delay Time :
196 ns
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Width :
4mm
Mount :
Surface Mount
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
8
JESD-609 Code :
e4
Vgs (Max) :
±8V
Turn On Delay Time :
16 ns
Voltage - Rated DC :
-20V
Gate Charge (Qg) (Max) @ Vgs :
74nC @ 4.5V
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Current Rating :
-10A
Drain to Source Voltage (Vdss) :
20V
Transistor Application :
SWITCHING
Terminal Position :
Dual
Length :
5mm
Number of Pins :
8
Transistor Element Material :
SILICON
Number of Elements :
1
FET Type :
P-Channel
Terminal Form :
Gull wing
Resistance :
13mOhm
Rds On (Max) @ Id, Vgs :
13m Ω @ 10A, 4.5V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
4951pF @ 10V
Continuous Drain Current (ID) :
10A
Rise Time :
9ns
Radiation Hardening :
No
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Operating Mode :
ENHANCEMENT MODE
Height :
1.5mm
Packaging :
Tape and Reel (TR)
Factory Lead Time :
18 Weeks
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Mounting Type :
Surface Mount
Weight :
130mg
Power Dissipation :
2.5W
Current - Continuous Drain (Id) @ 25°C :
10A Ta
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FDS6575
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6575 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:8, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, FDS6575 pinout, FDS6575 datasheet PDF, FDS6575 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6575 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6575


P-Channel Tape & Reel (TR) 13m Ω @ 10A, 4.5V ±8V 4951pF @ 10V 74nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)

FDS6575 Description


This tough gate variant of an advanced PowerTrench technology is a P-Channel 2.5V defined MOSFET. It was designed with a wide variety of gate drive voltages (2.5V–8V) in mind for power management applications.



FDS6575 Features


  • -10 A, -20 V

  • RDS(ON) = 13 mΩ @ VGS = -4.5 V

  • RDS(ON) = 17 mΩ @ VGS = -2.5 V

  • Low gate charge

  • High performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDS6575 Applications


  • This product is general usage and suitable for many different applications.

  • Power Management

  • Load Switch

  • Battery Protection


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