FDS6575
- Mfr.Part #
- FDS6575
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 10A 8SOIC
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- -20V
- Fall Time (Typ) :
- 78 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Published :
- 2001
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 2.5W Ta
- Gate to Source Voltage (Vgs) :
- 8V
- Element Configuration :
- Single
- Nominal Vgs :
- -600 mV
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 196 ns
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Width :
- 4mm
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 8
- JESD-609 Code :
- e4
- Vgs (Max) :
- ±8V
- Turn On Delay Time :
- 16 ns
- Voltage - Rated DC :
- -20V
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 4.5V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Current Rating :
- -10A
- Drain to Source Voltage (Vdss) :
- 20V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Length :
- 5mm
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Terminal Form :
- Gull wing
- Resistance :
- 13mOhm
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 10A, 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 4951pF @ 10V
- Continuous Drain Current (ID) :
- 10A
- Rise Time :
- 9ns
- Radiation Hardening :
- No
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 1.5mm
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 18 Weeks
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Mounting Type :
- Surface Mount
- Weight :
- 130mg
- Power Dissipation :
- 2.5W
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDS6575

P-Channel Tape & Reel (TR) 13m Ω @ 10A, 4.5V ±8V 4951pF @ 10V 74nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
FDS6575 Description
This tough gate variant of an advanced PowerTrench technology is a P-Channel 2.5V defined MOSFET. It was designed with a wide variety of gate drive voltages (2.5V–8V) in mind for power management applications.
FDS6575 Features
-
-10 A, -20 V
-
RDS(ON) = 13 mΩ @ VGS = -4.5 V
-
RDS(ON) = 17 mΩ @ VGS = -2.5 V
-
Low gate charge
-
High performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
FDS6575 Applications
-
This product is general usage and suitable for many different applications.
-
Power Management
-
Load Switch
-
Battery Protection
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