FDS6572A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

JESD-609 Code :

e3

Number of Elements :

1

Vgs (Max) :

±12V

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

Number of Terminations :

8

Drain-source On Resistance-Max :

0.006Ohm

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Terminal Position :

Dual

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Pin Count :

8

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

6m Ω @ 16A, 4.5V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

5.914pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

16A

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 4.5V