FDS4935A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

5mm

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

900mW

Contact Plating :

Tin

Transistor Application :

SWITCHING

Current Rating :

-7A

Width :

4mm

FET Type :

2 P-Channel (Dual)

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

1233pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Termination :

SMD/SMT

ECCN Code :

EAR99

Number of Terminations :

8

Element Configuration :

Dual

Turn On Delay Time :

13 ns

Published :

2002

Number of Elements :

2

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

-1.6 V

REACH SVHC :

No SVHC

Power Dissipation :

1.6W

Dual Supply Voltage :

-30V

Rds On (Max) @ Id, Vgs :

23m Ω @ 7A, 10V

JESD-609 Code :

e3

Threshold Voltage :

-1.6V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Current :

7A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No

Continuous Drain Current (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Resistance :

23mOhm

Turn-Off Delay Time :

48 ns

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Voltage - Rated DC :

-30V

Series :

PowerTrench®

Voltage :

30V

Number of Pins :

8

Drain to Source Breakdown Voltage :

-30V

Height :

1.5mm

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

25 ns

Rise Time :

10ns