FDP5N50

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Mfr.Part #
FDP5N50
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 5A TO220-3
Stock
13,368
In Stock :
13,368

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
16.3mm
Lead Free :
Lead Free
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
4.5A
Rise Time :
22ns
Transistor Application :
SWITCHING
Package / Case :
TO-220-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Gate to Source Voltage (Vgs) :
25V
Drain to Source Breakdown Voltage :
500V
JESD-609 Code :
e3
Turn-Off Delay Time :
28 ns
Length :
10.67mm
Number of Terminations :
3
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Published :
2013
Power Dissipation-Max :
78W Tc
Series :
UniFET-II™
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Qualification Status :
Not Qualified
Mount :
Through Hole
Mounting Type :
Through Hole
Factory Lead Time :
4 Weeks
Current - Continuous Drain (Id) @ 25°C :
4.5A Tc
Terminal Finish :
Tin (Sn)
Rds On (Max) @ Id, Vgs :
1.5 Ω @ 2.25A, 10V
Fall Time (Typ) :
21 ns
Pbfree Code :
yes
JEDEC-95 Code :
TO-220AB
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Weight :
1.8g
Number of Elements :
1
Number of Pins :
3
Turn On Delay Time :
12 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±25V
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Width :
4.7mm
Power Dissipation :
78W
Datasheets
FDP5N50
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP5N50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, FDP5N50 pinout, FDP5N50 datasheet PDF, FDP5N50 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP5N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDP5N50


N-Channel Tube 1.5 Ω @ 2.25A, 10V ±25V 440pF @ 25V 12nC @ 10V TO-220-3

FDP5N50NZ Description


The high voltage UniFETTM II MOSFET series from Fairchild Semiconductor is built on cutting-edge planar stripe and DMOS technology. This cutting-edge MOSFET series offers greater switching performance, higher avalanche energy strength, and the lowest on-state resistance among planar MOSFET. UniFET II MOSFET can endure over 2kV HBM surge stress thanks to an inbuilt gate-source ESD diode as well. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.



FDP5N50NZ Features


?VGS = 10 V, lD = 2.25 A, R DS(on)= 1-38 Q (Typ. ),


? Minimal Gate Fee (Typ. 9 nC)


?Low Crash CTyp.4pF)


?Avalanche tested in full


?More effective dv/dt capability


?Improved ESD Capability


? RoHS conformant



FDP5N50NZ Applications


?LED/LCD TV


?Lighting


?A backup power supply


?Power Supply, AC-DC


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