FDP5800

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mount :

Through Hole

REACH SVHC :

No SVHC

Packaging :

Tube

Resistance :

6mOhm

Rds On (Max) @ Id, Vgs :

6m Ω @ 80A, 10V

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

60V

Factory Lead Time :

11 Weeks

Fall Time (Typ) :

9 ns

Current :

81A

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

55 ns

Current Rating :

14A

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

242W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

242W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

18 ns

Current - Continuous Drain (Id) @ 25°C :

14A Ta 80A Tc

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

652 mJ

Rise Time :

19ns

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

3

Length :

9.9mm

Continuous Drain Current (ID) :

80A

Weight :

4.535924g

Height :

15.7mm

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

9160pF @ 15V

Threshold Voltage :

2.5V

Voltage :

60V

Voltage - Rated DC :

60V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

JESD-609 Code :

e3

Published :

2013

Width :

4.5mm

Operating Temperature :

-55°C~175°C TJ