FDN5630

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Height :

1.22mm

Nominal Vgs :

2.4 V

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.7A, 10V

JESD-609 Code :

e3

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Number of Channels :

1

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Threshold Voltage :

1V

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

60V

Voltage :

60V

Length :

2.92mm

Number of Pins :

3

Resistance :

100MOhm

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Power Dissipation-Max :

500mW Ta

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Mounting Type :

Surface Mount

Current Rating :

1.7A

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1.7A

Published :

2000

Width :

1.4mm

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

500mW

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

REACH SVHC :

No SVHC

Rise Time :

6ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Element Configuration :

Single

Radiation Hardening :

No

Current :

17A

Fall Time (Typ) :

6 ns

Pbfree Code :

yes

Series :

PowerTrench®

Dual Supply Voltage :

60V

Turn-Off Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 15V

Voltage - Rated DC :

60V

Min Breakdown Voltage :

60V

Number of Terminations :

3

Turn On Delay Time :

10 ns

Termination :

SMD/SMT