FDN5630
- Mfr.Part #
- FDN5630
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 1.7A SUPERSOT3
- Stock
- 3,419
- In Stock :
- 3,419
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Number of Channels :
- 1
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- Nominal Vgs :
- 2.4 V
- Voltage :
- 60V
- Power Dissipation :
- 500mW
- Threshold Voltage :
- 1V
- Length :
- 2.92mm
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Series :
- PowerTrench®
- Continuous Drain Current (ID) :
- 1.7A
- Published :
- 2000
- Current Rating :
- 1.7A
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 15 ns
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 10 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Ta
- Power Dissipation-Max :
- 500mW Ta
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Current :
- 17A
- Termination :
- SMD/SMT
- Contact Plating :
- Tin
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 1.7A, 10V
- Height :
- 1.22mm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Min Breakdown Voltage :
- 60V
- Dual Supply Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Resistance :
- 100MOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 15V
- JESD-609 Code :
- e3
- Max Junction Temperature (Tj) :
- 150°C
- Voltage - Rated DC :
- 60V
- Rise Time :
- 6ns
- Fall Time (Typ) :
- 6 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Width :
- 1.4mm
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Datasheets
- FDN5630

N-Channel Tape & Reel (TR) 100m Ω @ 1.7A, 10V ±20V 400pF @ 15V 10nC @ 10V TO-236-3, SC-59, SOT-23-3
Description
Explicitly designed to reduce on-state resistance and maintain a low gate charge for the best switching performance, the FDN5630 is a 60V N-channel PowerTrench? MOSFET. The newest medium voltage power MOSFET is an optimized power switch that combines a soft reverse recovery body diode, a small reverse recovery charge, and a small gate charge to provide quick switching for synchronous rectification in AC/DC power supply. It makes use of shielded-gate technology to maintain charge balance. These devices' FOM (figure of merit (QGxRDS(ON))) is 66 percent lower than that of earlier generations thanks to the use of this cutting-edge technology. Because it may reduce the unfavorable voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET eliminates snubber circuits or replaces higher voltage ratings - MOSFET requires circuits. This product is all-purpose and appropriate for a wide range of uses.
Features
-
Low gate charge
-
High-speed switching
-
SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint
-
1.7 A, 60 V. RDS(ON) = 0.100 ? @ VGS = 10 V
RDS(ON) = 0.120 ? @ VGS = 6 V
-
Optimized for use in high frequency DC/DC converters
Applications
-
DC/DC converter
-
Motor drives
-
Automotive electronics
-
As switching devices in electronic control units
-
As power converters in modern electric vehicles
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