FDN537N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

Drain Current-Max (Abs) (ID) :

8A

Turn On Delay Time :

5 ns

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Contact Plating :

Tin

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Pins :

3

Published :

2011

Power Dissipation :

1.5W

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.5W Ta

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

23m Ω @ 6.5A, 10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

465pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mount :

Surface Mount

Turn-Off Delay Time :

11 ns

Width :

1.4mm

Continuous Drain Current (ID) :

6.5A

Pulsed Drain Current-Max (IDM) :

25A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Length :

2.92mm

Weight :

30mg

Element Configuration :

Single

Height :

940μm

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

10 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Series :

PowerTrench®

Rise Time :

10ns

HTS Code :

8541.29.00.95

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta 6.5A Tc

Number of Elements :

1

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No