FDN5618P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

170mOhm

Vgs (Max) :

±20V

Series :

PowerTrench®

Turn On Delay Time :

6.5 ns

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Nominal Vgs :

20 V

Number of Elements :

1

Contact Plating :

Tin

Continuous Drain Current (ID) :

1.2A

Fall Time (Typ) :

8 ns

Published :

2000

Current Rating :

-1.25A

Package / Case :

TO-236-3, SC-59, SOT-23-3

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

170m Ω @ 1.25A, 10V

Voltage - Rated DC :

-60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 30V

Termination :

SMD/SMT

Dual Supply Voltage :

-60V

Threshold Voltage :

-1.6V

Mount :

Surface Mount

JESD-609 Code :

e3

Rise Time :

8ns

Height :

1.22mm

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

60V

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

500mW Ta

Weight :

30mg

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Width :

1.4mm

Pbfree Code :

yes

Power Dissipation :

500mW

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-60V

Length :

2.92mm

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

13.8nC @ 10V

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

16.5 ns

Current - Continuous Drain (Id) @ 25°C :

1.25A Ta

Transistor Element Material :

SILICON

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260