FDMS9620S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Power Dissipation :

2.5W

Factory Lead Time :

16 Weeks

Resistance :

32mOhm

Pbfree Code :

yes

Published :

2007

Radiation Hardening :

No

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Dual

Continuous Drain Current (ID) :

10A

Drain Current-Max (Abs) (ID) :

7.5A

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Turn-Off Delay Time :

27 ns

Gate to Source Voltage (Vgs) :

20V

Power - Max :

1W

Width :

6mm

JESD-609 Code :

e4

Lead Free :

Lead Free

Mount :

Surface Mount

Length :

5mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

21.5m Ω @ 7.5A, 10V

Package / Case :

8-PowerWDFN

FET Feature :

Logic Level Gate

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 15V

Rise Time :

13ns

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

60A

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Fall Time (Typ) :

7 ns

Operating Temperature :

-55°C~150°C TJ

Height :

750μm

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Threshold Voltage :

1.6V

Vgs(th) (Max) @ Id :

3V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Weight :

228mg

Current - Continuous Drain (Id) @ 25°C :

7.5A 10A

Max Power Dissipation :

2.5W