FDMS8090

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Length :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

750μm

Fall Time (Typ) :

4 ns

JESD-609 Code :

e4

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

17.4 ns

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Rise Time :

4.6ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

2.2W

Number of Terminations :

4

Weight :

250mg

Turn On Delay Time :

10.6 ns

Mounting Type :

Surface Mount

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Package / Case :

8-PowerWDFN

Series :

PowerTrench®

Mount :

Surface Mount

Radiation Hardening :

No

Continuous Drain Current (ID) :

10A

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Case Connection :

DRAIN

Power Dissipation :

59W

Gate to Source Voltage (Vgs) :

20V

Width :

6mm

Published :

2017

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.013Ohm

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 10V

Number of Pins :

8

JESD-30 Code :

R-PDSO-N4

Element Configuration :

Dual

Drain Current-Max (Abs) (ID) :

40A