FDMS3600S
- Mfr.Part #
- FDMS3600S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 15,847
- In Stock :
- 15,847
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Width :
- 6mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Dual
- Turn-Off Delay Time :
- 38 ns
- Nominal Vgs :
- 1.8 V
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 25V
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 25V
- Terminal Finish :
- Tin (Sn)
- Rds On Max :
- 5.6 mΩ
- Power Dissipation :
- 2.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 7
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN SOURCE
- Drain to Source Resistance :
- 1.6mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- QUAD
- Mount :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Input Capacitance :
- 1.68nF
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 30A
- Rise Time :
- 5.3ns
- Feedback Cap-Max (Crss) :
- 90 pF
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 2
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PQFP-N7
- Drain Current-Max (Abs) (ID) :
- 15A
- Min Operating Temperature :
- -55°C
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 3.9 ns
- Max Power Dissipation :
- 1W
- Number of Pins :
- 8
- Length :
- 5mm
- Weight :
- 171mg
- Height :
- 1.05mm
- Datasheets
- FDMS3600S

FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3600S Features
-
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
-
At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
-
Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
-
Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
-
Conforms to RoHS
FDMS3600S Applications
Notebook PC
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