FDMS3600S

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Mfr.Part #
FDMS3600S
Manufacturer
Fairchild Semiconductor
Package / Case
Datasheet
Download
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Stock
15,847
In Stock :
15,847

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Arrays
Width :
6mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Element Configuration :
Dual
Turn-Off Delay Time :
38 ns
Nominal Vgs :
1.8 V
Max Operating Temperature :
150°C
Drain to Source Voltage (Vdss) :
25V
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
25V
Terminal Finish :
Tin (Sn)
Rds On Max :
5.6 mΩ
Power Dissipation :
2.5W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
7
Gate to Source Voltage (Vgs) :
20V
Case Connection :
DRAIN SOURCE
Drain to Source Resistance :
1.6mOhm
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
QUAD
Mount :
Surface Mount
Factory Lead Time :
13 Weeks
Input Capacitance :
1.68nF
JESD-609 Code :
e3
ECCN Code :
EAR99
Continuous Drain Current (ID) :
30A
Rise Time :
5.3ns
Feedback Cap-Max (Crss) :
90 pF
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Number of Elements :
2
Transistor Application :
SWITCHING
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PQFP-N7
Drain Current-Max (Abs) (ID) :
15A
Min Operating Temperature :
-55°C
Radiation Hardening :
No
Fall Time (Typ) :
3.9 ns
Max Power Dissipation :
1W
Number of Pins :
8
Length :
5mm
Weight :
171mg
Height :
1.05mm
Datasheets
FDMS3600S
Introducing Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDMS3600S from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:7, Number of Pins:8, FDMS3600S pinout, FDMS3600S datasheet PDF, FDMS3600S amp .Beyond Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDMS3600S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDMS3600S


FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDMS3600S Description


In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.



FDMS3600S Features


  • Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.

  • At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.

  • Reduced rise/fall periods due to reduced inductance packing reduce switching losses.

  • Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.

  • Conforms to RoHS



FDMS3600S Applications


Notebook PC


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