FDFS6N303

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

30A

Number of Terminations :

8

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

6A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

900mW Ta

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 15V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

35m Ω @ 6A, 10V

FET Type :

N-Channel

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.035Ohm

Packaging :

Tape and Reel (TR)

FET Feature :

Schottky Diode (Isolated)

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-G8

Transistor Element Material :

SILICON