FDFS2P103A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Pbfree Code :

yes

Transistor Element Material :

SILICON

Power Dissipation-Max :

900mW Ta

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Pin Count :

8

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.059Ohm

Terminal Finish :

MATTE TIN

Vgs (Max) :

±25V

Number of Elements :

1

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

535pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

59m Ω @ 5.3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 5V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

20A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

5.3A

Series :

PowerTrench®

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Schottky Diode (Isolated)

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G8