FDFS2P102A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 5V

FET Feature :

Schottky Diode (Isolated)

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

10A

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Surface Mount :

yes

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.125Ohm

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

3.3A

Number of Terminations :

8

Transistor Application :

SWITCHING

Power Dissipation-Max :

900mW Ta

Current - Continuous Drain (Id) @ 25°C :

3.3A Ta

Vgs (Max) :

±20V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

8

Series :

PowerTrench®

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

125m Ω @ 3.3A, 10V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

182pF @ 10V

HTS Code :

8541.29.00.95

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)