FDC658P

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 15V

Rds On (Max) @ Id, Vgs :

50m Ω @ 4A, 10V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

1.1mm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mounting Type :

Surface Mount

Number of Channels :

1

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.6W Ta

Fall Time (Typ) :

16 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Continuous Drain Current (ID) :

-4A

Power Dissipation :

1.6W

Terminal Position :

Dual

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

24 ns

Current Rating :

-4A

Weight :

36mg

REACH SVHC :

No SVHC

Voltage - Rated DC :

-30V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Max Junction Temperature (Tj) :

150°C

Drain Current-Max (Abs) (ID) :

4A

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Published :

2017

Vgs (Max) :

±20V

Series :

PowerTrench®

Number of Terminations :

6

Length :

3mm

Rise Time :

14ns

Resistance :

50mOhm

Factory Lead Time :

10 Weeks

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Turn On Delay Time :

12 ns

Number of Pins :

6

Width :

1.7mm

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-30V

Mount :

Surface Mount

Threshold Voltage :

-1.7V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel