FDC658AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Nominal Vgs :

-1.8 V

JESD-609 Code :

e3

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Rise Time :

12ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.6W

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

25V

Rds On (Max) @ Id, Vgs :

50m Ω @ 4A, 10V

Number of Channels :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Width :

1.7mm

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 15V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Radiation Hardening :

No

Weight :

36mg

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Factory Lead Time :

10 Weeks

Number of Pins :

6

Threshold Voltage :

-1.8V

Height :

900μm

Drain Current-Max (Abs) (ID) :

4A

Element Configuration :

Single

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

REACH SVHC :

No SVHC

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

1.6W Ta

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 5V

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G3

Vgs (Max) :

±25V

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

-30V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

90 pF

Turn-Off Delay Time :

16 ns

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

7 ns

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

Continuous Drain Current (ID) :

4mA

Drain to Source Breakdown Voltage :

-30V

Resistance :

50mOhm

Length :

3mm

Published :

2017

Max Junction Temperature (Tj) :

150°C

Lead Free :

Lead Free

Fall Time (Typ) :

12 ns

Termination :

SMD/SMT