FDC658AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

36mg

Turn-Off Delay Time :

16 ns

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

FET Type :

P-Channel

Transistor Application :

SWITCHING

Rise Time :

12ns

JESD-30 Code :

R-PDSO-G3

Number of Channels :

1

ECCN Code :

EAR99

Power Dissipation :

1.6W

Feedback Cap-Max (Crss) :

90 pF

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Threshold Voltage :

-1.8V

Packaging :

Tape and Reel (TR)

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

-30V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation-Max :

1.6W Ta

Continuous Drain Current (ID) :

4mA

Vgs (Max) :

±25V

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Height :

900μm

Length :

3mm

Factory Lead Time :

10 Weeks

Max Junction Temperature (Tj) :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

12 ns

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Number of Elements :

1

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

50m Ω @ 4A, 10V

Published :

2017

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 5V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

Element Configuration :

Single

Nominal Vgs :

-1.8 V

Turn On Delay Time :

7 ns

Dual Supply Voltage :

-30V

Width :

1.7mm

Resistance :

50mOhm

Drain Current-Max (Abs) (ID) :

4A

Transistor Element Material :

SILICON

Radiation Hardening :

No

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 15V

Drain to Source Voltage (Vdss) :

30V