FDC658AP
- Mfr.Part #
- FDC658AP
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 263,605
- In Stock :
- 263,605
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 8.1nC @ 5V
- Feedback Cap-Max (Crss) :
- 90 pF
- Mounting Type :
- Surface Mount
- Length :
- 3mm
- Drain to Source Breakdown Voltage :
- -30V
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 4A, 10V
- Published :
- 2017
- Rise Time :
- 12ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 10 Weeks
- Max Junction Temperature (Tj) :
- 150°C
- Gate to Source Voltage (Vgs) :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain Current-Max (Abs) (ID) :
- 4A
- Threshold Voltage :
- -1.8V
- Termination :
- SMD/SMT
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Height :
- 900μm
- ECCN Code :
- EAR99
- Nominal Vgs :
- -1.8 V
- Number of Terminations :
- 6
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- P-Channel
- Contact Plating :
- Tin
- Turn On Delay Time :
- 7 ns
- Width :
- 1.7mm
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 1.6W Ta
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 470pF @ 15V
- Weight :
- 36mg
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- JESD-30 Code :
- R-PDSO-G3
- Continuous Drain Current (ID) :
- 4mA
- Resistance :
- 50mOhm
- Vgs (Max) :
- ±25V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 16 ns
- Series :
- PowerTrench®
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 12 ns
- Power Dissipation :
- 1.6W
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Dual Supply Voltage :
- -30V
- Number of Pins :
- 6
- Datasheets
- FDC658AP
FDC658AP Documents
P-Channel Tape & Reel (TR) 50m Ω @ 4A, 10V ±25V 470pF @ 15V 8.1nC @ 5V 30V SOT-23-6 Thin, TSOT-23-6
FDC658AP Description
FDC658AP P-Channel Logic Level MOSFET is produced using the ON Semiconductor's advanced PowerTrench process. It has been optimized for battery power management applications.
FDC658AP Features
-
Low Gate Charge
-
Max rDS(on) = 50 m@ VGS = -10 V, ID = -4A
-
Max rDS(on) = 75 m@ VGS = -4.5 V, ID = -3.4A
-
High-performance trench technology for extremely low rDS(on) RoHS Compliant
FDC658AP Applications
-
Load switch
-
Battery protection
-
DC/DC conversion
-
Battery management
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