FDC653N
- Mfr.Part #
- FDC653N
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 5A SUPERSOT6
- Stock
- 3,985
- In Stock :
- 3,985
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Weight :
- 30mg
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Current Rating :
- 5A
- Termination :
- SMD/SMT
- Drain to Source Breakdown Voltage :
- 30V
- Contact Plating :
- Tin
- Number of Pins :
- 6
- Continuous Drain Current (ID) :
- 5A
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 5A, 10V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 6
- Resistance :
- 35mOhm
- JESD-609 Code :
- e3
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Transistor Application :
- SWITCHING
- Width :
- 1.7mm
- Dual Supply Voltage :
- 30V
- Length :
- 3mm
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 1.6W
- Packaging :
- Tape and Reel (TR)
- Published :
- 1997
- Number of Channels :
- 1
- Element Configuration :
- Single
- Fall Time (Typ) :
- 12 ns
- Nominal Vgs :
- 1.7 V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 13 ns
- Factory Lead Time :
- 10 Weeks
- Pbfree Code :
- yes
- Height :
- 1.1mm
- Rise Time :
- 12ns
- Terminal Form :
- Gull wing
- Threshold Voltage :
- 1.7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 5A
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 7.5 ns
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 1.6W Ta
- Max Junction Temperature (Tj) :
- 150°C
- Datasheets
- FDC653N
FDC653N Documents

N-Channel Tape & Reel (TR) 35m Ω @ 5A, 10V ±20V 350pF @ 15V 17nC @ 10V SOT-23-6 Thin, TSOT-23-6
FDC653N N-Channel Enhancement Mode Power Field-Effect Transistors are made using a unique, high cell density technology called DMOS. This process is extremely dense and is designed to reduce the on-state resistance. These devices are specifically designed for applications with low voltage in notebook computers, mobile phones, PCMICA cards, and many other battery-powered circuits in which fast switching, as well as low power loss in the line.
FDC653N Features
RDS(ON) = 0.035 Ω @ VGS = 10 V
RDS(ON) = 0.055 Ω @ VGS = 4.5 V
Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities
High density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
FDC653N Applications
Notebook computers
Portable phones
PCMICA cards
Battery powered circuits
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDC6000NZ | onsemi | 22,299 | MOSFET 2N-CH 20V 7.3A 6SSOT |
| FDC6000NZ_F077 | onsemi | 30,841 | MOSFET 2N-CH 20V 7.3A 6-SSOP |
| FDC6020C | onsemi | 3,038 | MOSFET N/P-CH 20V 6SSOT |
| FDC6020C_F077 | onsemi | 21,607 | MOSFET N/P-CH 20V 6-SSOP |
| FDC602P | onsemi | 71,257 | MOSFET P-CH 20V 5.5A SUPERSOT6 |
| FDC602P_F095 | onsemi | 9,065 | MOSFET P-CH 20V 5.5A SUPERSOT6 |
| FDC6036P | onsemi | 43,827 | MOSFET 2P-CH 20V 5A 6SSOT |
| FDC6036P_F077 | onsemi | 29,143 | MOSFET 2P-CH 20V 5A 6SSOT |
| FDC604P | onsemi | 101,469 | MOSFET P-CH 20V 5.5A SUPERSOT6 |
| FDC604P | onsemi | 101,469 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDC606P | onsemi | 86 | MOSFET P-CH 12V 6A SUPERSOT6 |
| FDC606P | onsemi | 86 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDC608PZ | onsemi | 326,820 | MOSFET P-CH 20V 5.8A SUPERSOT6 |
| FDC608PZ-F171 | onsemi | 681,149 | -20V P-CHANNEL 2.5V POWERTRENCH |
| FDC608PZ-F171 | onsemi | 681,149 | FDC608PZ - P-CHANNEL POWERTRENCH |
















