FDC653N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

1.7V

Termination :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Drain Current-Max (Abs) (ID) :

5A

Height :

1.1mm

Power Dissipation-Max :

1.6W Ta

JESD-609 Code :

e3

Vgs (Max) :

±20V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Weight :

30mg

Number of Channels :

1

Turn-Off Delay Time :

13 ns

Factory Lead Time :

10 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power Dissipation :

1.6W

Transistor Element Material :

SILICON

Mount :

Surface Mount

Fall Time (Typ) :

12 ns

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

35m Ω @ 5A, 10V

Nominal Vgs :

1.7 V

Current Rating :

5A

Resistance :

35mOhm

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

REACH SVHC :

No SVHC

Number of Terminations :

6

Terminal Form :

Gull wing

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Voltage - Rated DC :

30V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Contact Plating :

Tin

FET Type :

N-Channel

Width :

1.7mm

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

7.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 15V

Continuous Drain Current (ID) :

5A

Dual Supply Voltage :

30V

Length :

3mm

Rise Time :

12ns

Published :

1997