FDC645N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

0.0055A

Current Rating :

5.5A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Height :

1.1mm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.6W

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

9 ns

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Pbfree Code :

yes

Weight :

36mg

Number of Elements :

1

FET Type :

N-Channel

Radiation Hardening :

No

Nominal Vgs :

1.4 V

Turn On Delay Time :

8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Vgs (Max) :

±12V

Terminal Finish :

Tin (Sn)

Rise Time :

9ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

6

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 15V

Max Junction Temperature (Tj) :

150°C

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs :

26m Ω @ 6.2A, 10V

Number of Pins :

6

Power Dissipation-Max :

1.6W Ta

Mount :

Surface Mount

Dual Supply Voltage :

30V

Turn-Off Delay Time :

35 ns

Drain to Source Breakdown Voltage :

30V

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

12V

Threshold Voltage :

1.4V

Series :

PowerTrench®

Continuous Drain Current (ID) :

5.5A

JESD-609 Code :

e3

Published :

2001

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Channels :

1

Resistance :

26mOhm