FDC6392S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

369pF @ 10V

Rise Time :

11ns

Published :

2002

Drain to Source Voltage (Vdss) :

20V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

150m Ω @ 2.2A, 4.5V

Number of Pins :

6

Lead Free :

Lead Free

Power Dissipation-Max :

960mW Ta

Number of Elements :

1

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Weight :

36mg

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

8 ns

FET Feature :

Schottky Diode (Isolated)

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Current Rating :

-2.2A

Transistor Application :

SWITCHING

Series :

PowerTrench®

Number of Terminations :

6

Drain to Source Breakdown Voltage :

-20V

Power Dissipation :

960mW

Voltage - Rated DC :

-20V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 4.5V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

2.2A

Vgs (Max) :

±12V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Radiation Hardening :

No

Fall Time (Typ) :

11 ns

FET Type :

P-Channel

Turn-Off Delay Time :

13 ns

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Vgs(th) (Max) @ Id :

1.5V @ 250µA