FDC638P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Current Rating :

-4.5A

Terminal Position :

Dual

Rise Time :

9ns

Fall Time (Typ) :

9 ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Length :

3mm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Power Dissipation-Max :

1.6W Ta

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Weight :

36mg

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 10V

Turn On Delay Time :

12 ns

Series :

PowerTrench®

Vgs (Max) :

±8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Channels :

1

Threshold Voltage :

-800mV

REACH SVHC :

No SVHC

Turn-Off Delay Time :

33 ns

Contact Plating :

Tin

Terminal Form :

Gull wing

Nominal Vgs :

-800 mV

Number of Pins :

6

Lead Free :

Lead Free

Voltage - Rated DC :

-20V

Resistance :

48mOhm

Published :

2001

Radiation Hardening :

No

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Continuous Drain Current (ID) :

-4.5A

Drain to Source Voltage (Vdss) :

20V

Width :

1.7mm

Drain to Source Breakdown Voltage :

-20V

Max Junction Temperature (Tj) :

150°C

Dual Supply Voltage :

-20V

Power Dissipation :

1.6W

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

10 Weeks

Number of Terminations :

6

Height :

1.1mm

Rds On (Max) @ Id, Vgs :

48m Ω @ 4.5A, 4.5V