FDC637BNZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Nominal Vgs :

800 mV

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

FET Type :

N-Channel

Max Junction Temperature (Tj) :

150°C

Terminal Position :

Dual

Terminal Form :

Gull wing

Rise Time :

6ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

20V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Power Dissipation :

800mW

Vgs (Max) :

±12V

Published :

2006

Factory Lead Time :

13 Weeks

Transistor Element Material :

SILICON

Fall Time (Typ) :

6 ns

Pbfree Code :

yes

Power Dissipation-Max :

1.6W Ta

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

895pF @ 10V

Turn-Off Delay Time :

22 ns

Turn On Delay Time :

8 ns

Threshold Voltage :

800mV

Number of Pins :

6

Resistance :

24mOhm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

ECCN Code :

EAR99

Continuous Drain Current (ID) :

6.2A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mount :

Surface Mount

Series :

PowerTrench®

Weight :

36mg

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

24m Ω @ 6.2A, 4.5V

Number of Channels :

1