FDC637AN

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Mfr.Part #
FDC637AN
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET N-CH 20V 6.2A SUPERSOT6
Stock
2,846
In Stock :
2,846

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Weight :
36mg
ECCN Code :
EAR99
Number of Terminations :
6
Terminal Form :
Gull wing
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Series :
PowerTrench®
Rds On (Max) @ Id, Vgs :
24m Ω @ 6.2A, 4.5V
Nominal Vgs :
820 mV
Transistor Element Material :
SILICON
Factory Lead Time :
10 Weeks
Voltage - Rated DC :
20V
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Resistance :
24mOhm
Threshold Voltage :
820mV
Width :
1.7mm
Transistor Application :
SWITCHING
Radiation Hardening :
No
Rise Time :
13ns
Input Capacitance (Ciss) (Max) @ Vds :
1125pF @ 10V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Power Dissipation :
1.6W
Continuous Drain Current (ID) :
6.2A
Fall Time (Typ) :
13 ns
Number of Pins :
6
Pbfree Code :
yes
Mounting Type :
Surface Mount
Published :
1999
Gate to Source Voltage (Vgs) :
8V
REACH SVHC :
No SVHC
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 4.5V
Drain to Source Breakdown Voltage :
20V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
6.2A Ta
Turn On Delay Time :
9 ns
Contact Plating :
Tin
Length :
3mm
Height :
1mm
Terminal Position :
Dual
Turn-Off Delay Time :
26 ns
Operating Temperature :
-55°C~150°C TJ
Current Rating :
6.2A
Mount :
Surface Mount
Vgs (Max) :
±8V
Power Dissipation-Max :
1.6W Ta
Number of Elements :
1
Datasheets
FDC637AN
Introducing Transistors - FETs, MOSFETs - Single onsemi FDC637AN from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Terminations:6, Number of Pins:6, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDC637AN pinout, FDC637AN datasheet PDF, FDC637AN amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDC637AN ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC637AN


N-Channel Tape & Reel (TR) 24m Ω @ 6.2A, 4.5V ±8V 1125pF @ 10V 16nC @ 4.5V SOT-23-6 Thin, TSOT-23-6

FDC637AN Description

The FDC637AN is a 2.5V single N-channel MOSFET manufactured using the innovative PowerTrench? technology. It has been specifically designed to reduce ON-state resistance while maintaining a low gate charge for enhanced switching performance. When compared to larger SO-8 and TSSOP-8 packages, it is designed to provide superior power dissipation in a relatively tiny footprint. It can be used in DC-to-DC converters, load switching, and battery protection.
FDC637AN Features

6.2 A, 20 V. RDS(on) = 0.024 ? @ VGS = 4.5 V
RDS(on) = 0.032 ? @ VGS = 2.5 V
Fast switching speed
High performance Trench technology for extremely low RDS (ON)
10.5nC typical low gate charge
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
FDC637AN Applications

DC/DC converter
Load switch
Battery Protection
Enterprise machine
Enterprise projectors
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