FDC6302P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

8ns

Turn On Delay Time :

5 ns

Voltage - Rated DC :

-25V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

25V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

900mW

Terminal Form :

Gull wing

Number of Terminations :

6

Fall Time (Typ) :

5 ns

FET Type :

2 P-Channel (Dual)

Rds On (Max) @ Id, Vgs :

10 Ω @ 200mA, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.12mm

Published :

1997

Dual Supply Voltage :

-25V

JESD-609 Code :

e3

Weight :

36mg

Width :

1.68mm

Factory Lead Time :

10 Weeks

Turn-Off Delay Time :

9 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mount :

Surface Mount

Threshold Voltage :

-1V

Operating Mode :

ENHANCEMENT MODE

Length :

3mm

Radiation Hardening :

No

Power - Max :

700mW

Max Power Dissipation :

900mW

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-25V

Termination :

SMD/SMT

Element Configuration :

Dual

Nominal Vgs :

-1 V

Continuous Drain Current (ID) :

-120mA

Current - Continuous Drain (Id) @ 25°C :

120mA

Terminal Finish :

Tin (Sn)

Current Rating :

-120mA

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Number of Pins :

6

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

0.31nC @ 4.5V

Number of Elements :

2