FCH072N60F
- Mfr.Part #
- FCH072N60F
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 52A TO247-3
- Stock
- 34,985
- In Stock :
- 34,985
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 156A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 38ns
- Packaging :
- Tube
- Length :
- 15.87mm
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 43 ns
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Fall Time (Typ) :
- 25 ns
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8660pF @ 100V
- Turn-Off Delay Time :
- 140 ns
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Factory Lead Time :
- 12 Weeks
- JEDEC-95 Code :
- TO-247AB
- Width :
- 4.82mm
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-247-3
- Power Dissipation :
- 481W
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Mounting Type :
- Through Hole
- Height :
- 20.82mm
- Avalanche Energy Rating (Eas) :
- 1128 mJ
- JESD-609 Code :
- e3
- Weight :
- 6.39g
- Drain to Source Breakdown Voltage :
- 600V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Series :
- FRFET®, SuperFET® II
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 0.072Ohm
- Power Dissipation-Max :
- 481W Tc
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 52A
- HTS Code :
- 8541.29.00.95
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 72m Ω @ 26A, 10V
- Datasheets
- FCH072N60F

N-Channel Tube 72m Ω @ 26A, 10V ±20V 8660pF @ 100V 215nC @ 10V TO-247-3
Description
The FCH072N60F is an 600 V, 52 A, 72 mΩ N-Channel SuperFET? II FRFET? MOSFET. Fairchild Semiconductor's SuperFET? II MOSFET of FCH072N60F is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, the SuperFET II MOSFET is well suited for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFETII FRFET? MOSFETs can eliminate unnecessary components and improve system reliability.
Features
? Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF)
? 100% Avalanche Tested
? RoHS Compliant
? 650 V @ TJ = 150°C
? Typ. RDS(on) = 65 mΩ
? Ultra Low Gate Charge (Typ. Qg = 165 nC)
Applications
? Switching Applications
? Automotive Electronics
? As Power Converters
? Accelerometer
? Amplifiers
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