FCH070N60E

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Mfr.Part #
FCH070N60E
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 52A TO247
Stock
68
In Stock :
68

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
HTS Code :
8541.29.00.95
Continuous Drain Current (ID) :
52A
Pbfree Code :
yes
Series :
SuperFET® II
Factory Lead Time :
12 Weeks
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Weight :
6.39g
Terminal Finish :
Tin (Sn)
Rds On (Max) @ Id, Vgs :
70m Ω @ 26A, 10V
Mount :
Through Hole
Reach Compliance Code :
not_compliant
Vgs (Max) :
±20V
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Input Capacitance (Ciss) (Max) @ Vds :
4925pF @ 380V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-247-3
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Power Dissipation-Max :
481W Tc
Gate Charge (Qg) (Max) @ Vgs :
166nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
3.5V @ 250µA
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
600V
ECCN Code :
EAR99
Datasheets
FCH070N60E
Introducing Transistors - FETs, MOSFETs - Single onsemi FCH070N60E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, FCH070N60E pinout, FCH070N60E datasheet PDF, FCH070N60E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCH070N60E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCH070N60E


N-Channel Tube 70m Ω @ 26A, 10V ±20V 4925pF @ 380V 166nC @ 10V 600V TO-247-3

FCH070N60E Description


The SUPERFET II MOSFET is a brand new high voltage super junction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, when compared to the SUPERFET II MOSFET series, the SUPERFET II MOSFET easy drive series has slightly slower rise and fall times. This family, denoted by the "E" component number suffix, aids in the management of EMI concerns and facilitates design implementation. Consider the SUPERFET II MOSFET series for faster switching in applications where switching losses must be kept to a minimum.



FCH070N60E Features


  • Typ. RDS(on) = 58 m

  • 650 V @ TJ = 150°C

  • 100% Avalanche Tested

  • Ultra Low Gate Charge (Typ. Qg = 128 nC)

  • These Devices are Pb?Free and are RoHS Compliant

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 457 pF)



FCH070N60E Applications


  • Industrial Power Supplies

  • Telecom / Server Power Supplies


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