EMG2DXV5T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-55°C

Terminal Finish :

Tin (Sn)

Number of Terminations :

5

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Published :

2005

Terminal Form :

Flat

Polarity :

NPN

Lead Free :

Lead Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Pin Count :

5

Max Collector Current :

100mA

Resistor - Emitter Base (R2) :

47k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

250mV

Number of Pins :

5

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

230mW

Continuous Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

47k Ω

Max Operating Temperature :

150°C

Surface Mount :

yes

Voltage - Rated DC :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

SOT-553

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

hFE Min :

80

Current Rating :

100mA

Base Part Number :

EMG

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

230mW

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified