EMG2DXV5T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

2

Polarity/Channel Type :

NPN

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

2 NPN - Pre-Biased (Dual)

Transistor Element Material :

SILICON

Pin Count :

5

Current - Collector (Ic) (Max) :

100mA

Terminal Finish :

MATTE TIN

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Emitter Base (R2) :

47k Ω

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Power - Max :

230mW

Surface Mount :

yes

JESD-609 Code :

e3

Number of Terminations :

5

Terminal Form :

Flat

JESD-30 Code :

R-PDSO-F5

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

47k Ω

Package / Case :

SOT-553

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL