EMD9T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Base Part Number :

*MD9

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Polarity :

NPN, PNP

Pin Count :

6

Pbfree Code :

yes

JESD-609 Code :

e3/e2

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

10

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Number of Terminations :

6

Number of Pins :

6

Max Power Dissipation :

150mW

Lead Free :

Lead Free

hFE Min :

68

Min Operating Temperature :

-55°C

Terminal Finish :

TIN/TIN COPPER

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Transition Frequency :

250MHz

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Published :

2010

Operating Supply Voltage :

50V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Mount :

Surface Mount

Element Configuration :

Dual

Resistor - Emitter Base (R2) :

47k Ω

ECCN Code :

EAR99

Current Rating :

70mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Resistor - Base (R1) :

10k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Package / Case :

SOT-563, SOT-666

HTS Code :

8541.21.00.75

Terminal Form :

Flat

Voltage - Rated DC :

50V

REACH SVHC :

No SVHC

Max Output Current :

100mA

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Power Dissipation :

150mW