ECH8502-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

50V

Frequency - Transition :

290MHz

Emitter Base Voltage (VEBO) :

6V

Power Dissipation :

1.6W

Lead Free :

Lead Free

Radiation Hardening :

No

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Pbfree Code :

yes

Max Collector Current :

5A

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

JESD-609 Code :

e6

Published :

2013

Operating Temperature :

150°C TJ

Polarity :

NPN, PNP

Surface Mount :

yes

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

hFE Min :

200

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Transition Frequency :

290MHz

Package / Case :

8-SMD, Flat Lead

Collector Base Voltage (VCBO) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

120mV @ 125mA, 2.5A

Max Power Dissipation :

1.6W

Transistor Type :

NPN, PNP

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Configuration :

SEPARATE, 2 ELEMENTS

Number of Elements :

1

Terminal Position :

Dual

Voltage - Collector Emitter Breakdown (Max) :

100V 50V

Current - Collector Cutoff (Max) :

100nA ICBO

Pin Count :

8