ECH8501-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

1.6W

Collector Emitter Voltage (VCEO) :

30V

Current - Collector (Ic) (Max) :

5A

Gain Bandwidth Product :

280MHz

Collector Base Voltage (VCBO) :

-30V

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

-100mV

Published :

2013

Radiation Hardening :

No

Transition Frequency :

280MHz

Collector Emitter Breakdown Voltage :

30V

Mounting Type :

Surface Mount

JESD-609 Code :

e6

Surface Mount :

yes

Lead Free :

Lead Free

Number of Terminations :

8

Max Collector Current :

5A

Number of Elements :

2

Package / Case :

8-SMD, Flat Lead

Element Configuration :

Dual

Polarity :

NPN, PNP

Halogen Free :

Halogen Free

Pbfree Code :

yes

hFE Min :

200

Terminal Finish :

Tin/Bismuth (Sn/Bi)

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

6V

Factory Lead Time :

2 Weeks

Max Power Dissipation :

1.6W

Transistor Type :

NPN, PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Number of Pins :

8

Vce Saturation (Max) @ Ib, Ic :

110mV @ 125mA, 2.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)