DXT651-13
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- Mfr.Part #
- DXT651-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A SOT89-3
- Stock
- 6,312
- In Stock ：
- 6,312
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 60V
- Weight :
- 51.993025mg
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Length :
- 4.5mm
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Base Part Number :
- DXT651
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Max Collector Current :
- 3A
- Width :
- 2.5mm
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.5mm
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Power - Max :
- 1W
- Number of Pins :
- 4
- Factory Lead Time :
- 14 Weeks
- Package / Case :
- TO-243AA
- Current - Collector (Ic) (Max) :
- 3A
- Supplier Device Package :
- SOT-89-3
- Gain Bandwidth Product :
- 200MHz
- Polarity :
- NPN
- Published :
- 2016
- Transistor Type :
- NPN
- Frequency - Transition :
- 200MHz
- Datasheets
- DXT651-13
NPN -55°C~150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount
DXT651-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 60V volts that it can take.The product comes in the supplier device package of SOT-89-3.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 3A volts at its maximum.
DXT651-13 Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of SOT-89-3
DXT651-13 Applications
There are a lot of Diodes Incorporated
DXT651-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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