DXT690BP5-13
- Mfr.Part #
- DXT690BP5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS NPN 45V 3A POWERDI5
- Stock
- 20,900
- In Stock :
- 20,900
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 150MHz
- Max Collector Current :
- 3A
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 740mW
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Max Power Dissipation :
- 3.2W
- Power Dissipation :
- 3.2W
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 150MHz
- Transition Frequency :
- 150MHz
- Manufacturer Package Identifier :
- POWERDI-5
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 350mV
- Current - Collector Cutoff (Max) :
- 20nA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 150mA, 3A
- Height :
- 1.15mm
- Continuous Collector Current :
- 3A
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Published :
- 2010
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- PowerDI™ 5
- Base Part Number :
- DXT690
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 4
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 45V
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 95.991485mg
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 2V
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Length :
- 4.05mm
- Width :
- 5.45mm
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-252
- Datasheets
- DXT690BP5-13

NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT690BP5-13 Overview
This device has a DC current gain of 150 @ 2A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 350mV @ 150mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 3A volts is possible.
DXT690BP5-13 Features
the DC current gain for this device is 150 @ 2A 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DXT690BP5-13 Applications
There are a lot of Diodes Incorporated
DXT690BP5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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