DST857BDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

100mA

Number of Terminations :

6

Radiation Hardening :

No

Mounting Type :

Surface Mount

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

300mW

Package / Case :

SOT-963

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 100mA

Polarity :

PNP

Collector Base Voltage (VCBO) :

50V

Continuous Collector Current :

-100mA

Published :

2012

Transistor Element Material :

SILICON

Base Part Number :

DST857BD

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Flat

Emitter Base Voltage (VEBO) :

-5V

Pbfree Code :

yes

Element Configuration :

Dual

Gain Bandwidth Product :

340MHz

Collector Emitter Breakdown Voltage :

45V

Max Breakdown Voltage :

45V

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

15nA ICBO

JESD-609 Code :

e3

Number of Elements :

2

Pin Count :

6

Transition Frequency :

340MHz

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

45V

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

-500mV

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

15 Weeks

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Transistor Type :

2 PNP (Dual)