DST857BDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

45V

Pin Count :

6

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 100mA

JESD-609 Code :

e3

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

45V

Continuous Collector Current :

-100mA

Collector Base Voltage (VCBO) :

50V

Gain Bandwidth Product :

340MHz

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

15nA ICBO

Max Breakdown Voltage :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

DST857BD

Published :

2012

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Transition Frequency :

340MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Number of Pins :

6

Emitter Base Voltage (VEBO) :

-5V

Transistor Type :

2 PNP (Dual)

Package / Case :

SOT-963

Polarity :

PNP

Factory Lead Time :

15 Weeks

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Form :

Flat

Mount :

Surface Mount

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

-500mV

ECCN Code :

EAR99

Power Dissipation :

300mW

Terminal Finish :

Matte Tin (Sn)