DST847BPDP6-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pbfree Code :

yes

Element Configuration :

Dual

Pin Count :

6

Collector Emitter Breakdown Voltage :

45V

Emitter Base Voltage (VEBO) :

-5V

Base Part Number :

DST847BPD

Frequency - Transition :

175MHz 340MHz

Factory Lead Time :

15 Weeks

ECCN Code :

EAR99

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Collector Emitter Voltage (VCEO) :

45V

Current - Collector Cutoff (Max) :

15nA ICBO

Polarity :

NPN, PNP

Mounting Type :

Surface Mount

Terminal Form :

Flat

Number of Terminations :

6

Gain Bandwidth Product :

340MHz

Number of Pins :

6

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

175MHz

Package / Case :

SOT-963

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN, PNP

Continuous Collector Current :

100mA

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

Collector Base Voltage (VCBO) :

50V

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Published :

2012

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA

Transistor Element Material :

SILICON

Max Power Dissipation :

250mW

Max Breakdown Voltage :

45V

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

-500mV