DST847BPDP6-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Dual

Frequency - Transition :

175MHz 340MHz

Collector Emitter Saturation Voltage :

-500mV

Gain Bandwidth Product :

340MHz

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

2

Collector Emitter Breakdown Voltage :

45V

Emitter Base Voltage (VEBO) :

-5V

Number of Terminations :

6

Transition Frequency :

175MHz

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-963

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA

Current - Collector Cutoff (Max) :

15nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Max Power Dissipation :

250mW

Packaging :

Tape and Reel (TR)

Pin Count :

6

Polarity :

NPN, PNP

JESD-609 Code :

e3

Number of Pins :

6

Max Collector Current :

100mA

Pbfree Code :

yes

Published :

2012

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

45V

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

45V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Continuous Collector Current :

100mA

Terminal Form :

Flat

Factory Lead Time :

15 Weeks

Collector Base Voltage (VCBO) :

50V

Base Part Number :

DST847BPD

Transistor Type :

NPN, PNP