DSC200100L
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- Mfr.Part #
- DSC200100L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A MINI3
- Stock
- 146,251
- In Stock ：
- 146,251
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- hFE Min :
- 210
- Transition Frequency :
- 150MHz
- Continuous Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- REACH SVHC :
- Unknown
- Gain Bandwidth Product :
- 150MHz
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Flat
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- HTS Code :
- 8541.21.00.75
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Width :
- 1.5mm
- Terminal Position :
- Dual
- Max Frequency :
- 150MHz
- Element Configuration :
- Single
- Length :
- 2.9mm
- Polarity/Channel Type :
- NPN
- Base Part Number :
- DSC2001
- Current - Collector Cutoff (Max) :
- 100μA
- Factory Lead Time :
- 10 Weeks
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Published :
- 2009
- Max Breakdown Voltage :
- 50V
- Packaging :
- Cut Tape (CT)
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 200mW
- Height :
- 1.1mm
- Collector Emitter Saturation Voltage :
- 300mV
- RoHS Status :
- RoHS Compliant
- Datasheets
- DSC200100L
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
DSC200100L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
DSC200100L Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
DSC200100L Applications
There are a lot of Panasonic Electronic Components
DSC200100L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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