DMTH10H017LPDQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Product Type :

MOSFET

Product Category :

MOSFET

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

PowerDI5060-8

Configuration :

Dual

Product Status :

Active

Technology :

Si

Gate Charge (Qg) (Max) @ Vgs :

28.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1986pF @ 50V

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Feature :

Standard

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

Channel Type :

Dual N

Subcategory :

MOSFETs

Supplier Device Package :

PowerDI5060-8 (Type E)

Base Product Number :

DMTH10H017

Rise Time :

16.3 ns

Transistor Polarity :

N-Channel

Brand :

Diodes Incorporated

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

13A (Ta), 59A (Tc)

Number of Channels :

2 Channel

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

100V

Package :

Tape and Reel (TR)

Packaging :

Cut Tape

Rds On (Max) @ Id, Vgs :

17.4mOhm @ 17A, 10V

Maximum Operating Temperature :

+ 175 C

Manufacturer :

Diodes Incorporated

Power - Max :

1.5W (Ta), 93W (Tc)

Series :

Automotive, AEC-Q101