DMT34M1LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

21A

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

22 Weeks

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0052Ohm

Number of Terminations :

5

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

250A

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Avalanche Energy Rating (Eas) :

78 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 20A, 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-F5

Power Dissipation-Max :

42W Tc

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2242pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Flat

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)