DMT3008LFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

30V

Continuous Drain Current (ID) :

12A

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

JESD-609 Code :

e4

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Factory Lead Time :

22 Weeks

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

12A Ta

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power Dissipation-Max :

800mW Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

10m Ω @ 9A, 10V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Package / Case :

6-UDFN Exposed Pad

JESD-30 Code :

S-PDSO-N6

Drain Current-Max (Abs) (ID) :

10.4A

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.01Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

886pF @ 15V

Operating Mode :

ENHANCEMENT MODE