DMT10H072LFDFQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Automotive, AEC-Q101

Base Product Number :

DMT10

Input Capacitance (Ciss) (Max) @ Vds :

228 pF @ 50 V

Drain to Source Voltage (Vdss) :

100 V

Continuous Drain Current Id :

4

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Configuration :

Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Product Type :

MOSFET

Brand :

Diodes Incorporated

FET Type :

N-Channel

Manufacturer :

Diodes Incorporated

Transistor Type :

1 N-Channel

Power Dissipation (Max) :

800mW (Ta)

Transistor Polarity :

N-Channel

Package :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

4.5 nC @ 10 V

Vgs (Max) :

±20V

Supplier Device Package :

U-DFN2020-6 (Type F)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Product Category :

MOSFET

Power Dissipation :

1.8

Subcategory :

MOSFETs

Rise Time :

3.1 ns

Mounting Style :

SMD/SMT

Maximum Operating Temperature :

+ 150 C

Qualification :

AEC-Q101

Minimum Operating Temperature :

- 55 C

Mounting Type :

Surface Mount

Product Status :

Active

Rds On (Max) @ Id, Vgs :

62mOhm @ 4.5A, 10V

FET Feature :

-

Channel Mode :

Enhancement

Packaging :

Reel

Package / Case :

6-UDFN Exposed Pad

Number of Channels :

1 Channel