DMT10H010LK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.015Ohm

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 13A, 10V

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

150 mJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

68.8A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Factory Lead Time :

19 Weeks

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

60.7A

Input Capacitance (Ciss) (Max) @ Vds :

2592pF @ 50V

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

53.7nC @ 10V

DS Breakdown Voltage-Min :

100V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Power Dissipation-Max :

3W Ta

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Published :

2016

Pulsed Drain Current-Max (IDM) :

250A

Terminal Position :

Single