DMT10H010LCT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 50V

Terminal Position :

Single

Number of Elements :

1

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Mounting Type :

Through Hole

ECCN Code :

EAR99

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 13A, 10V

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

Pulsed Drain Current-Max (IDM) :

92A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

2W Ta 139W Tc

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

62A

Drain-source On Resistance-Max :

0.012Ohm

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

98A

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

15 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

98A Tc

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Transistor Application :

SWITCHING

Factory Lead Time :

19 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V