DMP2305UVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

7.6nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

Terminal Finish :

Matte Tin (Sn)

FET Type :

P-Channel

Vgs (Max) :

±8V

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.2A, 4.5V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G6

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Operating Mode :

ENHANCEMENT MODE

Published :

2012

ECCN Code :

EAR99

Power Dissipation-Max :

1.4W

Continuous Drain Current (ID) :

4.23A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

3.49A

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

16A

Drain-source On Resistance-Max :

0.06Ohm

Mount :

Surface Mount

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

10 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

727pF @ 20V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

DS Breakdown Voltage-Min :

20V