DMP2022LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

12V

Width :

4.1mm

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Element Configuration :

Single

Mounting Type :

Surface Mount

Turn On Delay Time :

7.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2444pF @ 10V

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

56.9nC @ 10V

Power Dissipation :

2.5W

Number of Channels :

1

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Radiation Hardening :

No

Contact Plating :

Tin

Threshold Voltage :

770mV

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 10V

FET Type :

P-Channel

Number of Elements :

1

Weight :

850.995985mg

Vgs (Max) :

±12V

RoHS Status :

ROHS3 Compliant

Height :

1.5mm

Mount :

Surface Mount

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

9.9ns

Pulsed Drain Current-Max (IDM) :

35A

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

10A

Factory Lead Time :

19 Weeks

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

76.5 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Additional Feature :

High Reliability

Length :

5.3mm

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Power Dissipation-Max :

2.5W Ta

Number of Pins :

8

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

10A Ta

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

20V

Pin Count :

8

Turn-Off Delay Time :

108 ns