DMN5L06VKQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

High Reliability

FET Type :

2 N-Channel (Dual)

Power - Max :

250mW

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

3Ohm

Series :

Automotive, AEC-Q101

Rds On (Max) @ Id, Vgs :

2 Ω @ 50mA, 5V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

280mA Ta

Number of Elements :

2

Package / Case :

SOT-563, SOT-666

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

0.28A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss) :

5 pF

FET Feature :

Logic Level Gate

Published :

2007

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

50V

JESD-30 Code :

R-PDSO-F6

DS Breakdown Voltage-Min :

50V

Reach Compliance Code :

Unknown