DMN5L06DW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Number of Elements :

2

Transistor Element Material :

SILICON

Published :

2007

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Weight :

6.010099mg

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Additional Feature :

LOW CAPACITANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.35mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Radiation Hardening :

No

Height :

1mm

Max Power Dissipation :

200mW

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

2

Number of Pins :

6

Element Configuration :

Dual

Drain-source On Resistance-Max :

3Ohm

Continuous Drain Current (ID) :

280mA

Feedback Cap-Max (Crss) :

5 pF

Drain to Source Breakdown Voltage :

50V

Rds On (Max) @ Id, Vgs :

3 Ω @ 200mA, 2.7V

Packaging :

Tape and Reel (TR)

Length :

2.2mm

Lead Free :

Lead Free

Voltage - Rated DC :

50V

Number of Terminations :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

DMN5L06DW

Current Rating :

305mA

FET Feature :

Logic Level Gate

Terminal Finish :

Matte Tin (Sn)