DMN1019UVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

50.4nC @ 8V

Current - Continuous Drain (Id) @ 25°C :

10.7A Ta

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mount :

Surface Mount

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

12V

DS Breakdown Voltage-Min :

12V

JESD-30 Code :

R-PDSO-G6

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

4.7 mJ

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2015

Factory Lead Time :

15 Weeks

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

10m Ω @ 9.7A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

800mV @ 250μA

Number of Terminations :

6

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.01Ohm

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Vgs (Max) :

±8V

Continuous Drain Current (ID) :

10.7A

Pulsed Drain Current-Max (IDM) :

70A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2588pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.73W Ta