DMN1017UCP3-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1503pF @ 6V

Surface Mount :

yes

Factory Lead Time :

25 Weeks

Rds On (Max) @ Id, Vgs :

17m Ω @ 5A, 3.3V

Transistor Element Material :

SILICON

Number of Elements :

1

Drain to Source Voltage (Vdss) :

12V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

7.5A

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.024Ohm

JESD-30 Code :

S-XBCC-N3

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.47W

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

12V

Vgs (Max) :

±8V

Package / Case :

3-XDFN

Peak Reflow Temperature (Cel) :

260

Terminal Position :

BOTTOM

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Case Connection :

SOURCE

Feedback Cap-Max (Crss) :

389 pF

Terminal Form :

NO LEAD

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 3.3V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 3.3V

Terminal Finish :

Matte Tin (Sn)