DMMT5551S-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

160V

Packaging :

Tape and Reel (TR)

Width :

1.6mm

Gain Bandwidth Product :

300MHz

Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

19 Weeks

Mount :

Surface Mount

ECCN Code :

EAR99

Element Configuration :

Dual

Transistor Element Material :

SILICON

Package / Case :

SOT-23-6

Number of Terminations :

6

Radiation Hardening :

No

JESD-609 Code :

e3

Weight :

29.993795mg

Transition Frequency :

100MHz

Collector Emitter Breakdown Voltage :

160V

Length :

3mm

Max Power Dissipation :

300mW

Max Breakdown Voltage :

160V

Collector Base Voltage (VCBO) :

180V

Max Collector Current :

200mA

Number of Elements :

2

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

6V

Current - Collector Cutoff (Max) :

50nA ICBO

Collector Emitter Saturation Voltage :

200mV

Pin Count :

6

Terminal Form :

Gull wing

Transistor Type :

2 NPN (Dual) Matched Pair

Base Part Number :

DMMT5551

REACH SVHC :

No SVHC

Published :

2007

Terminal Finish :

Matte Tin (Sn)

Height :

1.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

300MHz

Number of Pins :

6

Polarity :

NPN

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V